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| VUO 30 Three Phase Rectifier Bridge IdAV = 37 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type ~ ~ ~ + + ~ + ~~ VUO 30-08NO3 VUO 30-12NO3 VUO 30-14NO3 VUO 30-16NO3 VUO 30-18NO3* - - - * delivery time on request Symbol IdAV x IdAVM x IFSM Test Conditions TC = 85C, module module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJH dS dA a 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. Test Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25C TVJ = TVJM TVJ = 25C t = 1 min t=1s (M5) (10-32 UNF) t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 37 50 300 330 270 290 450 460 365 355 -40...+125 125 -40...+125 3000 3600 2-2.5 18-22 50 A A A A A A A2s A2s As A2s C C C V~ V~ Nm lb.in. g 2 Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop 1/4" fast-on terminals UL registered E 72873 q q q q q q q Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Rectifier for DC motors field current q q q q q q q Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Characteristic Values 0.3 5 2.55 0.9 11 2.4 0.4 3.0 0.5 10 9.4 50 mA mA V V mW K/W K/W K/W K/W mm mm m/s2 Use output terminals in parallel connection! For power-loss calculations only per diode, DC current per module per diode, DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. x for resistive load at bridge output IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 VUO 30 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature Fig. 4 Power dissipation versus forward current and ambient temperature Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.489 0.544 1.376 0.6 ti (s) 0.0717 0.1241 0.1214 0.620 Fig. 5 Transient thermal impedance junction to heatsink per diode (c) 2000 IXYS All rights reserved 2-2 |
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